Features:

• Industry-leading noise performance through proprietary amplifier and filter design techniques
• Integrated shield greatly reduces capacitive coupling from current conductor to die due to high dV/dt signals,and prevents offset drift in high-side,high voltage applications
• Total output error improvement through gain and offset trim over temperature
• Small package size, with easy mounting capability
• Monolithic Hall IC for high reliability
• Ultra-low power loss: 100 μΩ internal conductor resistance
• Galvanic isolation allows use in economical, high-side current sensing in high voltage systems
• 3.0 to 5.5 V, single supply operation
• 120 KHz typical bandwidth
• 3 us output rise time in response to step input current
• Output voltage proportional to AC or DC currents
• Factory-trimmed for accuracy
• Extremely stable output offset voltage
• Nearly zero magnetic hysteresis
• Board Size:38.22*18.03mm
  
  

Technical Specifications:

• Voltage Supply (VDD): 3V0 ~ 5V5
• Abs.Max VDD: -0.5V ~ 8V0
• Measurement range: ±50A
• Interface: Analogue
• Active current (mA) (typ,max): 10, 13.5
• Conductor resistance 100µ Ohm
• Zero current output voltage: VCC/2
• Output offset (@25°C, High T, Low T)[3]mV: ±5, ±15, ±35
• Sensitivity: 40mV/A
• Noise: 10mV
• Magnetic offset error [1]: 100mA
• Propagation delay (Current change to op): 1µs
• Rise time (step response 10% to 90%): 3µs
• Error (High Temp, low Temp)[3]: -1.2%, 2%
• Accuracy best at [2][2a]: 5V supply
• Output load resistance: 4k7
• Output load capacitance (max): 10nF
• Overcurrent for 1s (@25°C,150°C): 1200A, 600A
• Isolation Voltage (VDC or VPK, VRMS): 900V, 700Vrms
• Package Thermal resistance: 7°C/W
• Max junction Temp.: 165°C
• Operating temperature: -40°C ~ 150°C

[1] Occurs when device is subjected to high or over current.
[2] For 3V3 contact AllegroMicroSystems for accuracy data.
[2a] The device is Ratiometric.
[3] High temp = 25°C ~ 150°C, Low temp = -40°C ~ 25°C.

Top Features

• Industry-leading noise performance through proprietary amplifier and filter design techniques
• Integrated shield greatly reduces capacitive coupling from current conductor to die due to high dV/dt signals, and prevents offset drift in high-side, high-voltage applications
• Total output error improvement through gain and offset trim over temperature
• Small package size, with easy mounting capability
• Monolithic Hall IC for high reliability
• Ultralow power loss: 100 µΩ internal conductor resistance
• Galvanic isolation allows use in economical, high-side current sensing in high-voltage systems
• 3.0 to 5.5 V, single supply operation
• 120 kHz typical bandwidth
• 3 µs output rise time in response to step input current
  Output voltage proportional to AC or DC currents
• Factory-trimmed for accuracy
• Stable output offset voltage
• Nearly zero magnetic hysteresis